Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80755
DC FieldValue
dc.titleMOS device conductance modelling technique for an accurate and efficient mixed-mode simulation of CMOS circuits
dc.contributor.authorSamudra, G.
dc.contributor.authorLee, T.K.
dc.date.accessioned2014-10-07T03:00:57Z
dc.date.available2014-10-07T03:00:57Z
dc.date.issued1996-02-01
dc.identifier.citationSamudra, G.,Lee, T.K. (1996-02-01). MOS device conductance modelling technique for an accurate and efficient mixed-mode simulation of CMOS circuits. Electronics Letters 32 (3) : 264-265. ScholarBank@NUS Repository.
dc.identifier.issn00135194
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80755
dc.description.abstractA new technique for modelling the conductance of an MOS device for the electrical logic simulation (the Elogic algorithm) of CMOS circuits is proposed. The technique is general and applicable to any analytic device current model. The Elogic algorithm allows the representation of a logic transition using a finite number of voltage steps and calculates time for each transition between the adjacent voltage steps. The examples show that the new technique can correctly predict a complete electrical waveform with a large voltage step of 1V to yield at least an order of magnitude computational time advantage over the circuit simulation.
dc.sourceScopus
dc.subjectCMOS integrated circuits
dc.subjectSemiconductor device models
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleElectronics Letters
dc.description.volume32
dc.description.issue3
dc.description.page264-265
dc.description.codenELLEA
dc.identifier.isiutNOT_IN_WOS
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