Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.669738
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dc.titleMonitoring of TiSi 2 formation on narrow polycrystalline silicon lines using raman spectroscopy
dc.contributor.authorLim, E.H.
dc.contributor.authorKarunasiri, G.
dc.contributor.authorChua, S.J.
dc.contributor.authorWong, H.
dc.contributor.authorPey, K.L.
dc.contributor.authorLee, K.H.
dc.date.accessioned2014-10-07T03:00:55Z
dc.date.available2014-10-07T03:00:55Z
dc.date.issued1998-05
dc.identifier.citationLim, E.H., Karunasiri, G., Chua, S.J., Wong, H., Pey, K.L., Lee, K.H. (1998-05). Monitoring of TiSi 2 formation on narrow polycrystalline silicon lines using raman spectroscopy. IEEE Electron Device Letters 19 (5) : 171-173. ScholarBank@NUS Repository. https://doi.org/10.1109/55.669738
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80752
dc.description.abstractMicro-Raman spectroscopy is used to monitor titanium silicide (TiSi 2) formation on narrow undoped polycrystalline silicon lines. Line widths varying from 1.0 μm down to 0.35 μm, with silicidation by rapid thermal anneal (RTA) temperature ranging between 780 °C and 1020 °C were analyzed. Phase changes between C49 and C54-Tisi 2 phases were clearly observed. Results demonstrate that analysis of the C54-TiSi 2 Raman peak intensity allowed fast and nondestructive estimation of the process window for low resistivity C54-TiSi 2 formation. Comparison with sheet resistivity measurements showed that micro-Reman scattering provides a complimentary means to electrical analysis for the study of Tisi 2 formation.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/55.669738
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/55.669738
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume19
dc.description.issue5
dc.description.page171-173
dc.description.codenEDLED
dc.identifier.isiut000073176700009
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