Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80743
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dc.titleModelling of a resonant tunnelling hot electron transistor
dc.contributor.authorSheng, Hanyu
dc.contributor.authorChua, Soo-Jin
dc.date.accessioned2014-10-07T03:00:50Z
dc.date.available2014-10-07T03:00:50Z
dc.date.issued1993-08
dc.identifier.citationSheng, Hanyu, Chua, Soo-Jin (1993-08). Modelling of a resonant tunnelling hot electron transistor. Semiconductor Science and Technology 8 (8) : 1590-1595. ScholarBank@NUS Repository.
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80743
dc.description.abstractA semiclassical model of a resonant tunnelling hot electron transistor (RHET) is proposed. The model includes quantum interference and multiple scattering by means of a correlation function and mean free path. The DC properties of a RHET are calculated and analyzed. The results show that the maximum common-emitter current gain of a RHET can be achieved by modulating the base width and barrier height of the emitter resonant tunnelling structure.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume8
dc.description.issue8
dc.description.page1590-1595
dc.description.codenSSTEE
dc.identifier.isiutA1993LT52300017
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