Please use this identifier to cite or link to this item:
|Title:||Modelling of a resonant tunnelling hot electron transistor||Authors:||Sheng, Hanyu
|Issue Date:||Aug-1993||Citation:||Sheng, Hanyu, Chua, Soo-Jin (1993-08). Modelling of a resonant tunnelling hot electron transistor. Semiconductor Science and Technology 8 (8) : 1590-1595. ScholarBank@NUS Repository.||Abstract:||A semiclassical model of a resonant tunnelling hot electron transistor (RHET) is proposed. The model includes quantum interference and multiple scattering by means of a correlation function and mean free path. The DC properties of a RHET are calculated and analyzed. The results show that the maximum common-emitter current gain of a RHET can be achieved by modulating the base width and barrier height of the emitter resonant tunnelling structure.||Source Title:||Semiconductor Science and Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/80743||ISSN:||02681242|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 18, 2018
WEB OF SCIENCETM
checked on Dec 26, 2018
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.