Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80741
DC FieldValue
dc.titleModelling and computer simulation study of laser-plasma interaction in semiconductor
dc.contributor.authorRajendran, K.
dc.date.accessioned2014-10-07T03:00:49Z
dc.date.available2014-10-07T03:00:49Z
dc.date.issued1999
dc.identifier.citationRajendran, K. (1999). Modelling and computer simulation study of laser-plasma interaction in semiconductor. COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 18 (2) : 187-203. ScholarBank@NUS Repository.
dc.identifier.issn03321649
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80741
dc.description.abstractComputer simulations were done extensively in order to study non-linear dynamics of laser-plasma interaction in InSb semiconductor. We constructed the modified Duffing kind of non-linear semiconductor plasma oscillator equation. Collision frequency is found to be dominant parameter to influence the bifurcation, chaos, hysteresis and bistable effects of plasma wave. Small windows of higher period cascade above the critical value of laser parameter (α1α2) in the chaos region are observed. Laser-plasma exhibits too much chaotic regime at lower value of laser driving frequency (δ). Hysteresis and bistable regions of plasma wave are presented and the conditions for their occurrence are identified. The unstable regions completely merge at higher value of effective collision frequency (γ).
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleCOMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
dc.description.volume18
dc.description.issue2
dc.description.page187-203
dc.description.codenCODUD
dc.identifier.isiutNOT_IN_WOS
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