Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80680
DC FieldValue
dc.titleLine-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines
dc.contributor.authorChua, H.N.
dc.contributor.authorPey, K.L.
dc.contributor.authorSiah, S.Y.
dc.contributor.authorLim, E.H.
dc.contributor.authorHo, C.S.
dc.date.accessioned2014-10-07T03:00:09Z
dc.date.available2014-10-07T03:00:09Z
dc.date.issued1999
dc.identifier.citationChua, H.N.,Pey, K.L.,Siah, S.Y.,Lim, E.H.,Ho, C.S. (1999). Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines. Materials Research Society Symposium - Proceedings 564 : 91-99. ScholarBank@NUS Repository.
dc.identifier.issn02729172
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80680
dc.description.abstractWe report the first observation of voids in sub-quarter micron Ti-salicided BF 2-doped polycrystalline silicon (polySi) lines. Some of the voids, with sizes ranging from 10 to 100 nm, can be clearly seen on the surface of the TiSi 2 film whereas others are situated below the TiSi 2 surface. The void density and size increase with decreasing polySi line-width, especially for line-widths < 0.24 μm. The voiding phenomenon was also observed to be more severe for TiSi 2 fabricated with enhanced salicidation techniques such as pre-amorphizationimplant (PAI) and implant-through-metal (ITM) as compared to the conventional salicidation method without amorphization. The origin of the voids is found to coincide with the fluorine peak at the TiSi 2/polySi interface in the SIMS depth-concentration profiles. © 1999 Materials Research Society.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleMaterials Research Society Symposium - Proceedings
dc.description.volume564
dc.description.page91-99
dc.description.codenMRSPD
dc.identifier.isiutNOT_IN_WOS
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