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|Title:||Laser-induced nano-oxidation on hydrogen-passivated Ge (100) surfaces under a scanning tunneling microscope tip||Authors:||Lu, Y.F.
|Issue Date:||18-Oct-1999||Citation:||Lu, Y.F.,Mai, Z.H.,Qiu, G.,Chim, W.K. (1999-10-18). Laser-induced nano-oxidation on hydrogen-passivated Ge (100) surfaces under a scanning tunneling microscope tip. Applied Physics Letters 75 (16) : 2359-2361. ScholarBank@NUS Repository.||Abstract:||Laser-induced nano-oxidation on hydrogen-passivated Ge (100) surfaces under a scanning tunneling microscope tip in air has been investigated. A 532 nm Nd:YAG pulsed laser with a pulse duration of 7 ns was used. A 2 × 2 oxide dot array with dot sizes between 20 and 30 nm and an oxide single line with a width less than 30 nm have been created using an electrochemical-etched tungsten tip under laser irradiation. The modified regions were characterized by atomic force microscope. The apparent depth of oxide layer as a function of laser intensity has been studied. The advantages and drawbacks of using a continuous wave laser and a pulsed laser will be discussed. © 1999 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80665||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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