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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80663
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dc.titleLaser-induced dry lift-off process
dc.contributor.authorLu, Yong-Feng
dc.contributor.authorAoyagi, Yoshinobu
dc.date.accessioned2014-10-07T02:59:58Z
dc.date.available2014-10-07T02:59:58Z
dc.date.issued1995
dc.identifier.citationLu, Yong-Feng,Aoyagi, Yoshinobu (1995). Laser-induced dry lift-off process. Japanese Journal of Applied Physics, Part 2: Letters 34 (12 B) : L1669-L1670. ScholarBank@NUS Repository.
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80663
dc.description.abstractA dry lift-off process has been achieved using pulsed KrF excimer laser irradiation in air to remove AZ resist and to form SiO2 patterns on GaAs substrate. SiO2 patterns with a resolution of quarter-micron order can be obtained by this process. The process is attributed to the laser photodecomposition of the resist material.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 2: Letters
dc.description.volume34
dc.description.issue12 B
dc.description.pageL1669-L1670
dc.description.codenJAPLD
dc.identifier.isiutNOT_IN_WOS
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