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|Title:||Laser-induced dry lift-off process||Authors:||Lu, Yong-Feng
|Issue Date:||1995||Citation:||Lu, Yong-Feng,Aoyagi, Yoshinobu (1995). Laser-induced dry lift-off process. Japanese Journal of Applied Physics, Part 2: Letters 34 (12 B) : L1669-L1670. ScholarBank@NUS Repository.||Abstract:||A dry lift-off process has been achieved using pulsed KrF excimer laser irradiation in air to remove AZ resist and to form SiO2 patterns on GaAs substrate. SiO2 patterns with a resolution of quarter-micron order can be obtained by this process. The process is attributed to the laser photodecomposition of the resist material.||Source Title:||Japanese Journal of Applied Physics, Part 2: Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80663||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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