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Title: Laser-induced dry lift-off process
Authors: Lu, Yong-Feng 
Aoyagi, Yoshinobu
Issue Date: 1995
Citation: Lu, Yong-Feng,Aoyagi, Yoshinobu (1995). Laser-induced dry lift-off process. Japanese Journal of Applied Physics, Part 2: Letters 34 (12 B) : L1669-L1670. ScholarBank@NUS Repository.
Abstract: A dry lift-off process has been achieved using pulsed KrF excimer laser irradiation in air to remove AZ resist and to form SiO2 patterns on GaAs substrate. SiO2 patterns with a resolution of quarter-micron order can be obtained by this process. The process is attributed to the laser photodecomposition of the resist material.
Source Title: Japanese Journal of Applied Physics, Part 2: Letters
ISSN: 00214922
Appears in Collections:Staff Publications

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