Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.123456
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dc.titleIntermixing in strained InGaAs/GaAs quantum-well infrared photodetectors
dc.contributor.authorLee, A.S.W.
dc.contributor.authorLi, E.H.
dc.contributor.authorKarunasiri, G.
dc.date.accessioned2014-10-07T02:59:32Z
dc.date.available2014-10-07T02:59:32Z
dc.date.issued1999
dc.identifier.citationLee, A.S.W., Li, E.H., Karunasiri, G. (1999). Intermixing in strained InGaAs/GaAs quantum-well infrared photodetectors. Applied Physics Letters 74 (8) : 1102-1104. ScholarBank@NUS Repository. https://doi.org/10.1063/1.123456
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80623
dc.description.abstractThe effect of interdiffusion on strained InGaAs/GaAs quantum-well infrared photodetectors is investigated. Photoluminescence measurements of the interband transition indicate that there is minimal deterioration of the annealed heterostructures, as it is also evident from both the transverse electric and transverse magnetic infrared intersubband optical transitions. The absorption peak wavelength is redshifted from the as-grown 10.2 μm to 10.5 and 11.2 μm for 5 and 10 s annealing, respectively, at 850 °C without appreciable degradation in absorption strength. The peak responsivity of the as-grown and annealed spectra is of comparable amplitude, whereas the annealed spectra become narrower in shape. The dark current of the annealed devices is about an order of magnitude higher than the as-grown one at 77 K. © 1999 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.123456
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1063/1.123456
dc.description.sourcetitleApplied Physics Letters
dc.description.volume74
dc.description.issue8
dc.description.page1102-1104
dc.description.codenAPPLA
dc.identifier.isiut000078685700016
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