Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80601
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dc.titleInfrared reflectance investigation of undoped and Si-doped GaN films on sapphire
dc.contributor.authorFeng, Z.C.
dc.contributor.authorHou, Y.T.
dc.contributor.authorLi, M.F.
dc.contributor.authorChua, S.J.
dc.contributor.authorWang, W.
dc.contributor.authorZhu, L.
dc.date.accessioned2014-10-07T02:59:18Z
dc.date.available2014-10-07T02:59:18Z
dc.date.issued1999-11
dc.identifier.citationFeng, Z.C.,Hou, Y.T.,Li, M.F.,Chua, S.J.,Wang, W.,Zhu, L. (1999-11). Infrared reflectance investigation of undoped and Si-doped GaN films on sapphire. Physica Status Solidi (B) Basic Research 216 (1) : 577-580. ScholarBank@NUS Repository.
dc.identifier.issn03701972
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80601
dc.description.abstractUndoped and Si-doped GaN films grown on sapphire were investigated by infrared reflectance spectroscopy. The carrier concentrations were determined from theoretical simulation fitting to the reststrahlen band, which are in agreement with Hall measurements. A damping behavior of the interference fringe contrast was observed, which can be well explained by the effect of an interface layer. Such interface layer was proposed to be due to the high density of defects near the GaN-substrate interface. As the doping level increases, this contrast damping is weakened, accompanying with the lowering of reflectivity in the higher frequency region. Combined with the atomic force microscopy analysis, an improvement of the interface quality, due to the Si-doping, is demonstrated.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitlePhysica Status Solidi (B) Basic Research
dc.description.volume216
dc.description.issue1
dc.description.page577-580
dc.identifier.isiutNOT_IN_WOS
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