Please use this identifier to cite or link to this item:
|Title:||Infrared reflectance investigation of undoped and Si-doped GaN films on sapphire||Authors:||Feng, Z.C.
|Issue Date:||Nov-1999||Citation:||Feng, Z.C.,Hou, Y.T.,Li, M.F.,Chua, S.J.,Wang, W.,Zhu, L. (1999-11). Infrared reflectance investigation of undoped and Si-doped GaN films on sapphire. Physica Status Solidi (B) Basic Research 216 (1) : 577-580. ScholarBank@NUS Repository.||Abstract:||Undoped and Si-doped GaN films grown on sapphire were investigated by infrared reflectance spectroscopy. The carrier concentrations were determined from theoretical simulation fitting to the reststrahlen band, which are in agreement with Hall measurements. A damping behavior of the interference fringe contrast was observed, which can be well explained by the effect of an interface layer. Such interface layer was proposed to be due to the high density of defects near the GaN-substrate interface. As the doping level increases, this contrast damping is weakened, accompanying with the lowering of reflectivity in the higher frequency region. Combined with the atomic force microscopy analysis, an improvement of the interface quality, due to the Si-doping, is demonstrated.||Source Title:||Physica Status Solidi (B) Basic Research||URI:||http://scholarbank.nus.edu.sg/handle/10635/80601||ISSN:||03701972|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 21, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.