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|Title:||Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy||Authors:||Chua, S.-J.
|Issue Date:||Jun-1998||Citation:||Chua, S.-J.,Zhang, Z.-H. (1998-06). Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 (6 A) : 3280-3281. ScholarBank@NUS Repository.||Abstract:||Using the emission wavelength and well thickness data of AlInGaAs/Al0.3Ga0.7As quantum wells obtained from room temperature photoluminescence and transmission electron microscopy, indium incorporation coefficients are determined for the growth of the quantum wells by molecular beam epitaxy (MBE). At a growth temperature of 600°C, the indium incorporation coefficient is found to be 0.54.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/80592||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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