Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2003.813469
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dc.titleImproved one-band self-consistent effective mass methods for hole quantization in p-MOSFET
dc.contributor.authorLow, T.
dc.contributor.authorHou, Y.-T.
dc.contributor.authorLi, M.-F.
dc.date.accessioned2014-10-07T02:59:03Z
dc.date.available2014-10-07T02:59:03Z
dc.date.issued2003-05
dc.identifier.citationLow, T., Hou, Y.-T., Li, M.-F. (2003-05). Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFET. IEEE Transactions on Electron Devices 50 (5) : 1284-1289. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2003.813469
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80578
dc.description.abstractAn improved one-band self-consistent effective mass approximation (EMA) for hole quantization in p-MOSFET is presented. It is developed by extracting empirically a set of hole-effective masses based on the rigorous self-consistent six-band EMA. It is found that the self-consistent model using such improved one-band effective masses can provide accurate hole quantization characteristics. For further simplification, the triangular well approximation is also assessed. Fairly accurate MOS electrostatics is also obtained if introducing an effective field in the inversion layer in triangular well approximation. However, the triangular well approximation has its limitation in describing the hole centroid. In essence, the shorter computing time of the proposed improved one-band methods without sacrificing the accuracy of MOS electrostatics provides its potential in device modeling for hole quantization.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2003.813469
dc.sourceScopus
dc.subjectHole quantization
dc.subjectImproved one-band
dc.subjectMOSFET
dc.subjectSelf-consistent
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2003.813469
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume50
dc.description.issue5
dc.description.page1284-1289
dc.description.codenIETDA
dc.identifier.isiut000184064400018
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