1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.887467
DC FieldValue
dc.titleImproved NiSi salicide process using presilicide N2 + implant for MOSFETs
dc.contributor.authorLee, P.S.
dc.contributor.authorPey, K.L.
dc.contributor.authorMangelinck, D.
dc.contributor.authorDing, J.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorChan, L.
dc.date.accessioned2014-10-07T02:59:02Z
dc.date.available2014-10-07T02:59:02Z
dc.date.issued2000-12
dc.identifier.citationLee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Wee, A.T.S., Chan, L. (2000-12). Improved NiSi salicide process using presilicide N2 + implant for MOSFETs. IEEE Electron Device Letters 21 (12) : 566-568. ScholarBank@NUS Repository. https://doi.org/10.1109/55.887467
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80577
dc.description.abstractAn improved Ni salicide process has been developed by incorporating nitrogen (N2 +) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750 °C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi2 phase was delayed, likely due to a change in the interfacial energy. The electrical results of N2 + implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N2 + implant.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/55.887467
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1109/55.887467
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume21
dc.description.issue12
dc.description.page566-568
dc.description.codenEDLED
dc.identifier.isiut000165684000007
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

31
checked on May 20, 2020

WEB OF SCIENCETM
Citations

22
checked on May 13, 2020

Page view(s)

62
checked on May 10, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.