Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.887467
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dc.titleImproved NiSi salicide process using presilicide N2 + implant for MOSFETs
dc.contributor.authorLee, P.S.
dc.contributor.authorPey, K.L.
dc.contributor.authorMangelinck, D.
dc.contributor.authorDing, J.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorChan, L.
dc.date.accessioned2014-10-07T02:59:02Z
dc.date.available2014-10-07T02:59:02Z
dc.date.issued2000-12
dc.identifier.citationLee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Wee, A.T.S., Chan, L. (2000-12). Improved NiSi salicide process using presilicide N2 + implant for MOSFETs. IEEE Electron Device Letters 21 (12) : 566-568. ScholarBank@NUS Repository. https://doi.org/10.1109/55.887467
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80577
dc.description.abstractAn improved Ni salicide process has been developed by incorporating nitrogen (N2 +) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750 °C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi2 phase was delayed, likely due to a change in the interfacial energy. The electrical results of N2 + implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N2 + implant.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/55.887467
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1109/55.887467
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume21
dc.description.issue12
dc.description.page566-568
dc.description.codenEDLED
dc.identifier.isiut000165684000007
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