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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.122277
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dc.titleImproved Mg-doped GaN films grown over a multilayered buffer
dc.contributor.authorZhang, X.
dc.contributor.authorChua, S.-J.
dc.contributor.authorLi, P.
dc.contributor.authorChong, K.-B.
dc.contributor.authorWang, W.
dc.date.accessioned2014-10-07T02:59:01Z
dc.date.available2014-10-07T02:59:01Z
dc.date.issued1998
dc.identifier.citationZhang, X., Chua, S.-J., Li, P., Chong, K.-B., Wang, W. (1998). Improved Mg-doped GaN films grown over a multilayered buffer. Applied Physics Letters 73 (13) : 1772-1774. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122277
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80575
dc.description.abstractMg-doped p-GaN films have been grown on sapphire substrate with a multilayered buffer (MLB) by metalorganic chemical vapor deposition and characterized by photoluminescence spectroscopy. The MLB consists of GaN/AlxGa1-xN(0
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.122277
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1063/1.122277
dc.description.sourcetitleApplied Physics Letters
dc.description.volume73
dc.description.issue13
dc.description.page1772-1774
dc.description.codenAPPLA
dc.identifier.isiut000076180300006
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