Please use this identifier to cite or link to this item: https://doi.org/10.1007/BF00305003
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dc.titleImpact ionizing electroluminescence of a double barrier structure
dc.contributor.authorSheng, H.
dc.contributor.authorChua, S.-J.
dc.date.accessioned2014-10-07T02:58:52Z
dc.date.available2014-10-07T02:58:52Z
dc.date.issued1994-11
dc.identifier.citationSheng, H., Chua, S.-J. (1994-11). Impact ionizing electroluminescence of a double barrier structure. Optical and Quantum Electronics 26 (11) : 1033-1040. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00305003
dc.identifier.issn03068919
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80561
dc.description.abstractThe impact ionizing electroluminescence model of a unipolar double barrier structure has been developed. The electron density in the quantum well and the hole density generated in the collector region are based on electron current. The electroluminescence results from direct radiative recombination between the electrons and holes in the quantum well. The results show that a light on-off ratio of the electroluminescence can be obtained. © 1994 Chapman & Hall.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/BF00305003
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1007/BF00305003
dc.description.sourcetitleOptical and Quantum Electronics
dc.description.volume26
dc.description.issue11
dc.description.page1033-1040
dc.description.codenOQELD
dc.identifier.isiutA1994PW18100005
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