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|Title:||Impact ionizing electroluminescence of a double barrier structure||Authors:||Sheng, H.
|Issue Date:||Nov-1994||Citation:||Sheng, H., Chua, S.-J. (1994-11). Impact ionizing electroluminescence of a double barrier structure. Optical and Quantum Electronics 26 (11) : 1033-1040. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00305003||Abstract:||The impact ionizing electroluminescence model of a unipolar double barrier structure has been developed. The electron density in the quantum well and the hole density generated in the collector region are based on electron current. The electroluminescence results from direct radiative recombination between the electrons and holes in the quantum well. The results show that a light on-off ratio of the electroluminescence can be obtained. © 1994 Chapman & Hall.||Source Title:||Optical and Quantum Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/80561||ISSN:||03068919||DOI:||10.1007/BF00305003|
|Appears in Collections:||Staff Publications|
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