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|Title:||Hybrid Gauss-Newton-simulated annealing optimizer for extraction of MESFET equivalent circuit elements||Authors:||Leong, M.S.
|Issue Date:||1-Jan-1993||Citation:||Leong, M.S.,Kooi, P.S.,Yeo, T.S.,Ooi, B.L. (1993-01-01). Hybrid Gauss-Newton-simulated annealing optimizer for extraction of MESFET equivalent circuit elements. Microwave and Optical Technology Letters 6 (8) : 461-466. ScholarBank@NUS Repository.||Abstract:||A new optimizer is presented for the extraction of the small-signal equivalent circuit elements (X) of a GaAs FET from its measured scattering (S) parameters. The approach is a combination of the damped Gauss-Newton method, for the least-squares fitting of the S parameters, and the random search generalized simulated annealing (GSA). Novel features of the proposed approach include (i) an improved Kondoh step-by-step optimization of the objective functions grouped according to their sensitivity to variation of key equivalent circuit parameters (X), and (ii) exploitation of the advantages derived from a transformation of the objective functions from scattering parameters to impedance parameters.||Source Title:||Microwave and Optical Technology Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80552||ISSN:||08952477|
|Appears in Collections:||Staff Publications|
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