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https://doi.org/10.1088/0268-1242/11/10/005
DC Field | Value | |
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dc.title | Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses | |
dc.contributor.author | Lou, C.L. | |
dc.contributor.author | Chim, W.K. | |
dc.contributor.author | Chan, D.S.H. | |
dc.contributor.author | Pan, Y. | |
dc.date.accessioned | 2014-10-07T02:58:42Z | |
dc.date.available | 2014-10-07T02:58:42Z | |
dc.date.issued | 1996-10 | |
dc.identifier.citation | Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y. (1996-10). Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses. Semiconductor Science and Technology 11 (10) : 1381-1387. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/11/10/005 | |
dc.identifier.issn | 02681242 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80545 | |
dc.description.abstract | Under maximum substrate current (lsub.max) stress (i.e. Vg ≈ Vd/2), the hot-carrier induced degradation of tungsten polycide gate (WSix) n-MOSFETs in the linear drain current and maximum linear transconductance is lower, and the shift in the threshold voltage is higher than that of polysilicon gate (PolySi) n-MOSFETs. However, under maximum gate current (Ig,max) stress (i.e. Vg = Vd), the WSix n-MOSFETs showed higher hot-carrier induced degradation than the PolySi devices. In contrast, WSix p-MOSFETs showed higher degradation compared with the PolySi p-MOSFETs under both lg,max (i.e. Vg < Vd/2) and ISUb,max (i.e. Vg ≈ Vd/2) stresses. An explanation, substantiated by charge-pumping measurements, is proposed to explain the phenomena observed. The hot-carrier lifetime of WSix p-MOSFETs is found to limit the operation of WSix CMOS circuits. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.doi | 10.1088/0268-1242/11/10/005 | |
dc.description.sourcetitle | Semiconductor Science and Technology | |
dc.description.volume | 11 | |
dc.description.issue | 10 | |
dc.description.page | 1381-1387 | |
dc.description.coden | SSTEE | |
dc.identifier.isiut | A1996VU74700002 | |
Appears in Collections: | Staff Publications |
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