Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/11/10/005
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dc.titleHot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses
dc.contributor.authorLou, C.L.
dc.contributor.authorChim, W.K.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorPan, Y.
dc.date.accessioned2014-10-07T02:58:42Z
dc.date.available2014-10-07T02:58:42Z
dc.date.issued1996-10
dc.identifier.citationLou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y. (1996-10). Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses. Semiconductor Science and Technology 11 (10) : 1381-1387. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/11/10/005
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80545
dc.description.abstractUnder maximum substrate current (lsub.max) stress (i.e. Vg ≈ Vd/2), the hot-carrier induced degradation of tungsten polycide gate (WSix) n-MOSFETs in the linear drain current and maximum linear transconductance is lower, and the shift in the threshold voltage is higher than that of polysilicon gate (PolySi) n-MOSFETs. However, under maximum gate current (Ig,max) stress (i.e. Vg = Vd), the WSix n-MOSFETs showed higher hot-carrier induced degradation than the PolySi devices. In contrast, WSix p-MOSFETs showed higher degradation compared with the PolySi p-MOSFETs under both lg,max (i.e. Vg < Vd/2) and ISUb,max (i.e. Vg ≈ Vd/2) stresses. An explanation, substantiated by charge-pumping measurements, is proposed to explain the phenomena observed. The hot-carrier lifetime of WSix p-MOSFETs is found to limit the operation of WSix CMOS circuits.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1088/0268-1242/11/10/005
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume11
dc.description.issue10
dc.description.page1381-1387
dc.description.codenSSTEE
dc.identifier.isiutA1996VU74700002
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