Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80534
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dc.titleHigh-field electron transport for ellipsoidal multivalley band structure of silicon
dc.contributor.authorSamudra, G.
dc.contributor.authorChua, S.J.
dc.contributor.authorGhatak, A.K.
dc.contributor.authorArora, V.K.
dc.date.accessioned2014-10-07T02:58:36Z
dc.date.available2014-10-07T02:58:36Z
dc.date.issued1992
dc.identifier.citationSamudra, G., Chua, S.J., Ghatak, A.K., Arora, V.K. (1992). High-field electron transport for ellipsoidal multivalley band structure of silicon. Journal of Applied Physics 72 (10) : 4700-4704. ScholarBank@NUS Repository.
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80534
dc.description.abstractHigh-field electron-transport properties of bulk silicon are studied taking into account the multivalley band structure with ellipsoidal energy surface. A distribution function that takes into account the anisotropy introduced in electron motion by the high electric field is described. This puts some order in the otherwise completely random motion. The transition from linear to nonlinear behavior is obtained when the energy gained by an electron in traversing a mean free path is comparable to the thermal energy. The drift velocity is shown to be limited to the random thermal velocity for nondegenerate electrons and to the Fermi velocity for degenerate electrons. This indicates independence of the saturation velocity on momentum-randomizing scattering events which control the mobility. The emission of an optical phonon is significant when inelastic scattering length is comparable to the momentum randomizing mean free path. This further lowers the saturation velocity. When an electric field is applied along the
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.352075
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume72
dc.description.issue10
dc.description.page4700-4704
dc.identifier.isiutA1992JX76600028
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