Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80454
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dc.titleFrequency dependence of MOS capacitance in strong inversion and at elevated temperatures
dc.contributor.authorLing, C.H.
dc.contributor.authorKwok, C.Y.
dc.contributor.authorChan, E.G.
dc.contributor.authorTay, T.M.
dc.date.accessioned2014-10-07T02:57:43Z
dc.date.available2014-10-07T02:57:43Z
dc.date.issued1986-09
dc.identifier.citationLing, C.H.,Kwok, C.Y.,Chan, E.G.,Tay, T.M. (1986-09). Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures. Solid State Electronics 29 (9) : 995-997. ScholarBank@NUS Repository.
dc.identifier.issn00381101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80454
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleSolid State Electronics
dc.description.volume29
dc.description.issue9
dc.description.page995-997
dc.description.codenSSELA
dc.identifier.isiutNOT_IN_WOS
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