Please use this identifier to cite or link to this item:
https://doi.org/10.1109/16.563376
DC Field | Value | |
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dc.title | Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current | |
dc.contributor.author | Ling, C.H. | |
dc.contributor.author | Goh, Y.H. | |
dc.contributor.author | Ooi, J.A. | |
dc.date.accessioned | 2014-10-07T02:57:41Z | |
dc.date.available | 2014-10-07T02:57:41Z | |
dc.date.issued | 1997 | |
dc.identifier.citation | Ling, C.H., Goh, Y.H., Ooi, J.A. (1997). Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current. IEEE Transactions on Electron Devices 44 (4) : 681-683. ScholarBank@NUS Repository. https://doi.org/10.1109/16.563376 | |
dc.identifier.issn | 00189383 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80451 | |
dc.description.abstract | The buildup of positive oxide charge and interface trap charge, due to Fowler-Nordheim stress, is observed in the gate-drain overlap region of the MOSFET. Results from gate-to-drain capacitance and charge pumping current show a steady increase in positive charge near the anode interface. Interface trap generation becomes significant when injected electron fluence exceeds ∼1014 cm-2, and dominates net charge creation at higher fluence. © 1997 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.563376 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.doi | 10.1109/16.563376 | |
dc.description.sourcetitle | IEEE Transactions on Electron Devices | |
dc.description.volume | 44 | |
dc.description.issue | 4 | |
dc.description.page | 681-683 | |
dc.description.coden | IETDA | |
dc.identifier.isiut | A1997WQ14300025 | |
Appears in Collections: | Staff Publications |
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