Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.563376
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dc.titleFowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current
dc.contributor.authorLing, C.H.
dc.contributor.authorGoh, Y.H.
dc.contributor.authorOoi, J.A.
dc.date.accessioned2014-10-07T02:57:41Z
dc.date.available2014-10-07T02:57:41Z
dc.date.issued1997
dc.identifier.citationLing, C.H., Goh, Y.H., Ooi, J.A. (1997). Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current. IEEE Transactions on Electron Devices 44 (4) : 681-683. ScholarBank@NUS Repository. https://doi.org/10.1109/16.563376
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80451
dc.description.abstractThe buildup of positive oxide charge and interface trap charge, due to Fowler-Nordheim stress, is observed in the gate-drain overlap region of the MOSFET. Results from gate-to-drain capacitance and charge pumping current show a steady increase in positive charge near the anode interface. Interface trap generation becomes significant when injected electron fluence exceeds ∼1014 cm-2, and dominates net charge creation at higher fluence. © 1997 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.563376
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/16.563376
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume44
dc.description.issue4
dc.description.page681-683
dc.description.codenIETDA
dc.identifier.isiutA1997WQ14300025
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