Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0268-1242/15/6/317
DC Field | Value | |
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dc.title | Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing | |
dc.contributor.author | Tan, L.S. | |
dc.contributor.author | Prakash, S. | |
dc.contributor.author | Ng, K.M. | |
dc.contributor.author | Ramam, A. | |
dc.contributor.author | Chua, S.J. | |
dc.contributor.author | Wee, A.T.S. | |
dc.contributor.author | Lim, S.L. | |
dc.date.accessioned | 2014-10-07T02:57:38Z | |
dc.date.available | 2014-10-07T02:57:38Z | |
dc.date.issued | 2000-06 | |
dc.identifier.citation | Tan, L.S., Prakash, S., Ng, K.M., Ramam, A., Chua, S.J., Wee, A.T.S., Lim, S.L. (2000-06). Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing. Semiconductor Science and Technology 15 (6) : 585-588. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/15/6/317 | |
dc.identifier.issn | 02681242 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80446 | |
dc.description.abstract | Ohmic contacts have been fabricated on Si-doped GaN using Ti/Al by low temperature annealing at 500°C. A contact resistivity of 8.6 × 10-6 ohm cm2 was obtained for n-GaN samples doped to 3.67 × 1018 cm-3. Secondary ion mass spectrometry (SIMS) analysis showed that Al diffused through the Ti layer after annealing. Furthermore, energy dispersive x-ray spectroscopy (EDS) analysis showed that reaction products of Al, Ti, Ga and N were present at the interface. Hence, a complex ternary or quaternary nitride as a possible low barrier height material to n-GaN may have resulted in good ohmic contact. Photoluminescence (PL) showed that there was no degradation in the epilayer quality of the film after annealing at 500°C for 25 minutes. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1088/0268-1242/15/6/317 | |
dc.description.sourcetitle | Semiconductor Science and Technology | |
dc.description.volume | 15 | |
dc.description.issue | 6 | |
dc.description.page | 585-588 | |
dc.description.coden | SSTEE | |
dc.identifier.isiut | 000087585500018 | |
Appears in Collections: | Staff Publications |
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