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https://doi.org/10.1088/0953-8984/9/18/005
DC Field | Value | |
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dc.title | First-principles calculations of band offsets of AlxGa1-xP-GaP(001) heterostructures | |
dc.contributor.author | Chua, S.J. | |
dc.contributor.author | Zhang, X.H. | |
dc.contributor.author | Xu, S.J. | |
dc.contributor.author | Gu, X. | |
dc.date.accessioned | 2014-10-07T02:57:30Z | |
dc.date.available | 2014-10-07T02:57:30Z | |
dc.date.issued | 1997-05-05 | |
dc.identifier.citation | Chua, S.J., Zhang, X.H., Xu, S.J., Gu, X. (1997-05-05). First-principles calculations of band offsets of AlxGa1-xP-GaP(001) heterostructures. Journal of Physics Condensed Matter 9 (18) : L279-L283. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/9/18/005 | |
dc.identifier.issn | 09538984 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80436 | |
dc.description.abstract | A first-principles pseudopotential method combined with the virtual-crystal approximation (VCA) is used to calculate band offsets of AlxGa1-xP-GaP(001) heterostructures. It was found that both the valence and conduction band offsets vary linearly with the alloy composition. Our results are in good agreement with the experimental data. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.contributor.department | INST OF MATERIALS RESEARCH & ENGINEERING | |
dc.description.doi | 10.1088/0953-8984/9/18/005 | |
dc.description.sourcetitle | Journal of Physics Condensed Matter | |
dc.description.volume | 9 | |
dc.description.issue | 18 | |
dc.description.page | L279-L283 | |
dc.description.coden | JCOME | |
dc.identifier.isiut | A1997WY53400005 | |
Appears in Collections: | Staff Publications |
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