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|Title:||FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search - a new concept||Authors:||Lin, Fujiang
|Issue Date:||Jul-1994||Citation:||Lin, Fujiang, Kompa, Guenter (1994-07). FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search - a new concept. IEEE Transactions on Microwave Theory and Techniques 42 (7) : 1114-1121. ScholarBank@NUS Repository. https://doi.org/10.1109/22.299745||Abstract:||A new optimization formulation is presented for efficient FET model parameter extraction, in which data-fitting is carried out in multi reference planes instead of only one, and the objective function is minimized by a bidirectional search technique. As an example of application, all parameters of a commonly used 15-element small-signal FET equivalent circuit model are clearly identified from only one set of measured S-parameters. A self-consistent generation of starting values can be involved regarding the FET in the passive pinch-off operating mode. Moreover, applying multi-bias data-fitting, which is performed without increasing the number of ordinary optimization variables, yields a robust determination of both the overall bias-independent parasitics and the bias-dependent intrinsic elements. For demonstration results are presented for a 0.5-μm MESFET.||Source Title:||IEEE Transactions on Microwave Theory and Techniques||URI:||http://scholarbank.nus.edu.sg/handle/10635/80427||ISSN:||00189480||DOI:||10.1109/22.299745|
|Appears in Collections:||Staff Publications|
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