Please use this identifier to cite or link to this item: https://doi.org/10.1109/22.299745
Title: FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search - a new concept
Authors: Lin, Fujiang 
Kompa, Guenter
Issue Date: Jul-1994
Citation: Lin, Fujiang, Kompa, Guenter (1994-07). FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search - a new concept. IEEE Transactions on Microwave Theory and Techniques 42 (7) : 1114-1121. ScholarBank@NUS Repository. https://doi.org/10.1109/22.299745
Abstract: A new optimization formulation is presented for efficient FET model parameter extraction, in which data-fitting is carried out in multi reference planes instead of only one, and the objective function is minimized by a bidirectional search technique. As an example of application, all parameters of a commonly used 15-element small-signal FET equivalent circuit model are clearly identified from only one set of measured S-parameters. A self-consistent generation of starting values can be involved regarding the FET in the passive pinch-off operating mode. Moreover, applying multi-bias data-fitting, which is performed without increasing the number of ordinary optimization variables, yields a robust determination of both the overall bias-independent parasitics and the bias-dependent intrinsic elements. For demonstration results are presented for a 0.5-μm MESFET.
Source Title: IEEE Transactions on Microwave Theory and Techniques
URI: http://scholarbank.nus.edu.sg/handle/10635/80427
ISSN: 00189480
DOI: 10.1109/22.299745
Appears in Collections:Staff Publications

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