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|Title:||Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum wells||Authors:||Li, G.
|Issue Date:||1998||Citation:||Li, G., Babinski, A., Chua, S.J., Jagadish, C. (1998). Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum wells. Applied Physics Letters 72 (18) : 2322-2324. ScholarBank@NUS Repository. https://doi.org/10.1063/1.121349||Abstract:||In Si δ-modulation-doped GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum well structures (QWs), the electrons from the ionized Si donors are initially confined in the V-shaped potential well (V-PW) formed at the position of a Si δ-doped layer. The efficiency of electrons transferring from the V-PW to the QW was investigated as a function of Si δ-doping concentration in the symmetric GaAs/In0.2Ga0.8As/GaAs QW at 1.7 K. The electron density in the QW increases linearly with an increase of Si δ-doping concentration, while the electron transfer efficiency remains unchanged either in the dark or under the illumination. The asymmetric GaAs/In0.2Ga0.8As/Al0.2Ga0.8As QW has a relatively higher electron transfer efficiency. The effect of grading the Al mole fraction over the AlxGa1-xAs spacer layer on the electron transfer efficiency was also reported. © 1998 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80392||ISSN:||00036951||DOI:||10.1063/1.121349|
|Appears in Collections:||Staff Publications|
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