Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/11/5/005
DC FieldValue
dc.titleDetermination of substrate doping, substrate carrier lifetime and density of surface recombination centres of MOSFETs by gate-controlled-diode measurements
dc.contributor.authorChen, T.P.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorChim, W.K.
dc.date.accessioned2014-10-07T02:56:39Z
dc.date.available2014-10-07T02:56:39Z
dc.date.issued1996-05
dc.identifier.citationChen, T.P., Chan, D.S.H., Chim, W.K. (1996-05). Determination of substrate doping, substrate carrier lifetime and density of surface recombination centres of MOSFETs by gate-controlled-diode measurements. Semiconductor Science and Technology 11 (5) : 672-678. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/11/5/005
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80358
dc.description.abstractA MOSFET with source floating or drain floating or source connected to drain is similar to a gate-controlled-diode structure. In the present study, gate-controlled-diode measurement has been performed for n-channel MOSFETs at room temperature. It is shown that the doping concentration in the substrate region under the gate and the density of the generation-recombination centres at the Si/SiO2 interface can be obtained from the gate-controlled-diode measurement with source floating. In addition, the carrier lifetime in the substrate region can also be determined from the gate-controlled-diode measurement with source connected to drain. As a simple non-destructive technique, the gate-controlled-diode technique provides useful information about the regions of interest at the device level. Furthermore, it does not require special test structures, and it can be carried out for conventional MOSFETs.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1088/0268-1242/11/5/005
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume11
dc.description.issue5
dc.description.page672-678
dc.description.codenSSTEE
dc.identifier.isiutA1996UJ83800003
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