Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/80355
DC Field | Value | |
---|---|---|
dc.title | Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy | |
dc.contributor.author | Lau, W.S. | |
dc.contributor.author | Zhong, L. | |
dc.contributor.author | Lee, A. | |
dc.contributor.author | See, C.H. | |
dc.contributor.author | Han, T. | |
dc.contributor.author | Sandier, N.P. | |
dc.contributor.author | Chong, T.C. | |
dc.date.accessioned | 2014-10-07T02:56:37Z | |
dc.date.available | 2014-10-07T02:56:37Z | |
dc.date.issued | 1997-07-28 | |
dc.identifier.citation | Lau, W.S.,Zhong, L.,Lee, A.,See, C.H.,Han, T.,Sandier, N.P.,Chong, T.C. (1997-07-28). Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy. Applied Physics Letters 71 (4) : 500-502. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80355 | |
dc.description.abstract | Defect states responsible for leakage current in ultrathin (physical thickness | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 71 | |
dc.description.issue | 4 | |
dc.description.page | 500-502 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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