Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80355
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dc.titleDetection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy
dc.contributor.authorLau, W.S.
dc.contributor.authorZhong, L.
dc.contributor.authorLee, A.
dc.contributor.authorSee, C.H.
dc.contributor.authorHan, T.
dc.contributor.authorSandier, N.P.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T02:56:37Z
dc.date.available2014-10-07T02:56:37Z
dc.date.issued1997-07-28
dc.identifier.citationLau, W.S.,Zhong, L.,Lee, A.,See, C.H.,Han, T.,Sandier, N.P.,Chong, T.C. (1997-07-28). Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy. Applied Physics Letters 71 (4) : 500-502. ScholarBank@NUS Repository.
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80355
dc.description.abstractDefect states responsible for leakage current in ultrathin (physical thickness
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleApplied Physics Letters
dc.description.volume71
dc.description.issue4
dc.description.page500-502
dc.description.codenAPPLA
dc.identifier.isiutNOT_IN_WOS
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