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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.123460
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dc.titleDepth profiling of GaN by cathodoluminescence microanalysis
dc.contributor.authorFleischer, K.
dc.contributor.authorToth, M.
dc.contributor.authorPhillips, M.R.
dc.contributor.authorZou, J.
dc.contributor.authorLi, G.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T02:56:34Z
dc.date.available2014-10-07T02:56:34Z
dc.date.issued1999
dc.identifier.citationFleischer, K., Toth, M., Phillips, M.R., Zou, J., Li, G., Chua, S.J. (1999). Depth profiling of GaN by cathodoluminescence microanalysis. Applied Physics Letters 74 (8) : 1114-1116. ScholarBank@NUS Repository. https://doi.org/10.1063/1.123460
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80350
dc.description.abstractWe present the results of a depth-resolved cathodoluminescence (CL) and transmission electron microscopy study of autodoped GaN grown on sapphire. Depth-resolved CL analysis can be used for depth profiling of the yellow luminescence (YL) center concentration which was found to increase with depth. The results are consistent with the (ON-VGa)2- complex model of YL centers [J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996) and T. Mattila and R. M. Nieminen, Phys. Rev. B 55, 9571 (1996)]. Depth profiling of the near-edge emission in GaN layers thicker than ∼0.5 μm is not possible due to strong self-absorption. © 1999 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.123460
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1063/1.123460
dc.description.sourcetitleApplied Physics Letters
dc.description.volume74
dc.description.issue8
dc.description.page1114-1116
dc.description.codenAPPLA
dc.identifier.isiut000078685700020
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