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|Title:||Depth profiling of GaN by cathodoluminescence microanalysis||Authors:||Fleischer, K.
|Issue Date:||1999||Citation:||Fleischer, K., Toth, M., Phillips, M.R., Zou, J., Li, G., Chua, S.J. (1999). Depth profiling of GaN by cathodoluminescence microanalysis. Applied Physics Letters 74 (8) : 1114-1116. ScholarBank@NUS Repository. https://doi.org/10.1063/1.123460||Abstract:||We present the results of a depth-resolved cathodoluminescence (CL) and transmission electron microscopy study of autodoped GaN grown on sapphire. Depth-resolved CL analysis can be used for depth profiling of the yellow luminescence (YL) center concentration which was found to increase with depth. The results are consistent with the (ON-VGa)2- complex model of YL centers [J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996) and T. Mattila and R. M. Nieminen, Phys. Rev. B 55, 9571 (1996)]. Depth profiling of the near-edge emission in GaN layers thicker than ∼0.5 μm is not possible due to strong self-absorption. © 1999 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80350||ISSN:||00036951||DOI:||10.1063/1.123460|
|Appears in Collections:||Staff Publications|
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