Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/80348
DC Field | Value | |
---|---|---|
dc.title | Deposition of AlN thin films with cubic crystal structures on silicon substrates at room temperature | |
dc.contributor.author | Ren, Zhong-Min | |
dc.contributor.author | Lu, Yong-Feng | |
dc.contributor.author | Goh, Yeow-Whatt | |
dc.contributor.author | Chong, Tow-Chong | |
dc.contributor.author | Ng, Mei-Ling | |
dc.contributor.author | Wang, Jian-Ping | |
dc.contributor.author | Cheong, Boon-Aik | |
dc.contributor.author | Liew, Yun-Fook | |
dc.date.accessioned | 2014-10-07T02:56:33Z | |
dc.date.available | 2014-10-07T02:56:33Z | |
dc.date.issued | 2000 | |
dc.identifier.citation | Ren, Zhong-Min,Lu, Yong-Feng,Goh, Yeow-Whatt,Chong, Tow-Chong,Ng, Mei-Ling,Wang, Jian-Ping,Cheong, Boon-Aik,Liew, Yun-Fook (2000). Deposition of AlN thin films with cubic crystal structures on silicon substrates at room temperature. Japanese Journal of Applied Physics, Part 2: Letters 39 (5 A) : L423-L425. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00214922 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80348 | |
dc.description.abstract | Cubic AlN thin films were deposited at room temperature by nitrogen-ion-assisted pulsed laser ablation of a hexagonal AlN target. The full-width at half maximum (FWHM) of the X-ray diffraction peak in the θ to approximately 2θ scan can reach a value of 0.27 degrees. In the Raman spectroscopy measurement, a new peak at 2333 cm-1 originating from cubic AlN polycrystalline was observed. Nitrogen ions not only effectively promote the formation of stable Al-N bonds but also improve the crystal properties of the deposited thin films. A nitrogen ion energy of 400 eV is proposed for the thin-film deposition. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | DATA STORAGE INSTITUTE | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Japanese Journal of Applied Physics, Part 2: Letters | |
dc.description.volume | 39 | |
dc.description.issue | 5 A | |
dc.description.page | L423-L425 | |
dc.description.coden | JAPLD | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.