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|Title:||Deposition of AlN thin films with cubic crystal structures on silicon substrates at room temperature||Authors:||Ren, Zhong-Min
|Issue Date:||2000||Citation:||Ren, Zhong-Min,Lu, Yong-Feng,Goh, Yeow-Whatt,Chong, Tow-Chong,Ng, Mei-Ling,Wang, Jian-Ping,Cheong, Boon-Aik,Liew, Yun-Fook (2000). Deposition of AlN thin films with cubic crystal structures on silicon substrates at room temperature. Japanese Journal of Applied Physics, Part 2: Letters 39 (5 A) : L423-L425. ScholarBank@NUS Repository.||Abstract:||Cubic AlN thin films were deposited at room temperature by nitrogen-ion-assisted pulsed laser ablation of a hexagonal AlN target. The full-width at half maximum (FWHM) of the X-ray diffraction peak in the θ to approximately 2θ scan can reach a value of 0.27 degrees. In the Raman spectroscopy measurement, a new peak at 2333 cm-1 originating from cubic AlN polycrystalline was observed. Nitrogen ions not only effectively promote the formation of stable Al-N bonds but also improve the crystal properties of the deposited thin films. A nitrogen ion energy of 400 eV is proposed for the thin-film deposition.||Source Title:||Japanese Journal of Applied Physics, Part 2: Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80348||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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