Please use this identifier to cite or link to this item: https://doi.org/10.1109/68.84467
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dc.titleConsiderations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structure
dc.contributor.authorWan, H.W.
dc.contributor.authorChong, T.C.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T02:56:23Z
dc.date.available2014-10-07T02:56:23Z
dc.date.issued1991-08
dc.identifier.citationWan, H.W., Chong, T.C., Chua, S.J. (1991-08). Considerations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structure. IEEE Photonics Technology Letters 3 (8) : 730-732. ScholarBank@NUS Repository. https://doi.org/10.1109/68.84467
dc.identifier.issn10411135
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80334
dc.description.abstractIt is shown that In1-xGaxAs/ In0.52Al0.48As MQW structures with the wells under tensile strain obtained by the appropriate selection of the Ga mole fraction and well size can achieve polarization-insensitive optical switching and modulation for a wide range of wavelengths between 1.0 and 1.6 μm. For example, a change in refractive index of -0.5% at about 1.55 μm will facilitate an intersectional angle of more than 10° in a total internal reflection switch which can be readily fabricated. Hence, this material system is promising for long-wavelength polarization-insensitive semiconductor optoelectronic devices.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/68.84467
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/68.84467
dc.description.sourcetitleIEEE Photonics Technology Letters
dc.description.volume3
dc.description.issue8
dc.description.page730-732
dc.description.codenIPTLE
dc.identifier.isiutA1991GB25200016
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