Considerations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structure

Abstract

It is shown that In1-xGaxAs/ In0.52Al0.48As MQW structures with the wells under tensile strain obtained by the appropriate selection of the Ga mole fraction and well size can achieve polarization-insensitive optical switching and modulation for a wide range of wavelengths between 1.0 and 1.6 μm. For example, a change in refractive index of -0.5% at about 1.55 μm will facilitate an intersectional angle of more than 10° in a total internal reflection switch which can be readily fabricated. Hence, this material system is promising for long-wavelength polarization-insensitive semiconductor optoelectronic devices.