Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.644662
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dc.titleClose correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's
dc.contributor.authorLing, C.H.
dc.date.accessioned2014-10-07T02:56:18Z
dc.date.available2014-10-07T02:56:18Z
dc.date.issued1997
dc.identifier.citationLing, C.H. (1997). Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's. IEEE Transactions on Electron Devices 44 (12) : 2309-2311. ScholarBank@NUS Repository. https://doi.org/10.1109/16.644662
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80326
dc.description.abstractA linear relation exists between the maximum forward gated-diode current Id and the corresponding maximum charge pumping current Icp in a hot-carrier stressed pMOSFET. Id peak is further observed to shift by an amount equal to the shift in the rising edge of Icp. A close correspondence between the two currents is demonstrated. © 1997 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.644662
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/16.644662
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume44
dc.description.issue12
dc.description.page2309-2311
dc.description.codenIETDA
dc.identifier.isiutA1997YH43200031
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