Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.112385
DC Field | Value | |
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dc.title | Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester | |
dc.contributor.author | Phang, J.C.H. | |
dc.contributor.author | Sim, K.S. | |
dc.contributor.author | Chan, D.S.H. | |
dc.date.accessioned | 2014-10-07T02:56:17Z | |
dc.date.available | 2014-10-07T02:56:17Z | |
dc.date.issued | 1994 | |
dc.identifier.citation | Phang, J.C.H., Sim, K.S., Chan, D.S.H. (1994). Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester. Applied Physics Letters 65 (26) : 3341-3343. ScholarBank@NUS Repository. https://doi.org/10.1063/1.112385 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80325 | |
dc.description.abstract | Numerical simulations show that the sidewall of a probe hole in the SiO2 passivation layer of an integrated circuit charges negatively when a 1 keV beam is probing a test point inside the probe hole. The negative charges on the sidewalls create a local electric field that suppresses the low-energy secondary electrons and at the same time focuses the higher-energy secondary electrons. These potential barrier and lens effects degrade the detected secondary electron signal and may have significant consequences for voltage contrast measurements. © 1994 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.112385 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.doi | 10.1063/1.112385 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 65 | |
dc.description.issue | 26 | |
dc.description.page | 3341-3343 | |
dc.identifier.isiut | A1994PY28000013 | |
Appears in Collections: | Staff Publications |
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