Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80313
DC FieldValue
dc.titleCarrier concentration saturation in n type AlxGa1-xAs
dc.contributor.authorDu, A.Y.
dc.contributor.authorLi, M.F.
dc.contributor.authorChong, T.C.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T02:56:09Z
dc.date.available2014-10-07T02:56:09Z
dc.date.issued1995
dc.identifier.citationDu, A.Y.,Li, M.F.,Chong, T.C.,Chua, S.J. (1995). Carrier concentration saturation in n type AlxGa1-xAs. Materials Science Forum 196-201 (pt 1) : 279-284. ScholarBank@NUS Repository.
dc.identifier.issn02555476
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80313
dc.description.abstractDue to the negative U property of donor DX center, the Fermi energy tends to be pinned to the DX center free energy level when the Si doping concentration is increased. Correspondingly, the carrier concentration tends to saturate. It is a general property in n-type compound semiconductors when donor impurities induce negative U DX levels in the energy gap. In this work, in a series of Al0.3Ga0.7As epitaxial layers with different Si doping concentrations varied from 1×1017cm-3 to 1.5×1018cm-3, carrier concentration saturation effect was observed by Hall measurements. This effect will have great influence in designing optoelectronic and fast microelectronic devices.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleMaterials Science Forum
dc.description.volume196-201
dc.description.issuept 1
dc.description.page279-284
dc.description.codenMSFOE
dc.identifier.isiutNOT_IN_WOS
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