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|Title:||Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a δ-doping technique||Authors:||Jung, H.D.
|Issue Date:||3-Mar-1997||Citation:||Jung, H.D.,Song, C.D.,Wang, S.Q.,Arai, K.,Wu, Y.H.,Zhu, Z.,Yao, T.,Katayama-Yoshida, H. (1997-03-03). Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a δ-doping technique. Applied Physics Letters 70 (9) : 1143-1145. ScholarBank@NUS Repository.||Abstract:||We have studied the p-type doping of ZnSe and ZnS grown by molecular beam epitaxy using active nitrogen and tellurium. Highly conductive p-type ZnSe and ZnS films have been achieved by inserting heavily N-doped ZnTe layers into each layer. A hole concentration of 7×1018 cm-3 in a ZnSe/ZnTe:N δ-doped layer and a [Na-Nd] value of 5×1017 cm-3 in a ZnS/ZnTe:N δ-doped layer were obtained. Excitonic emission associated with the N acceptor at 2.792 eV in ZnSe was dominant in the photoluminescence spectra at 14 K and the emission related to the Te isoelectronic deep centers was negligibly weak. These results indicate that the incorporation of ZnTe:N single layers by this δ-doping method dramatically increases the hole concentration, and the optical properties are consistent with this improvement. © 1997 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80312||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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