Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.122899
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dc.titleBuried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer
dc.contributor.authorWang, Z.J.
dc.contributor.authorChua, S.-J.
dc.contributor.authorZhou, F.
dc.contributor.authorWang, W.
dc.contributor.authorWu, R.H.
dc.date.accessioned2014-10-07T02:56:08Z
dc.date.available2014-10-07T02:56:08Z
dc.date.issued1998
dc.identifier.citationWang, Z.J., Chua, S.-J., Zhou, F., Wang, W., Wu, R.H. (1998). Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer. Applied Physics Letters 73 (26) : 3803-3805. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122899
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80311
dc.description.abstractAn InAlAs native oxide is used to replace the p-n reverse-biased junction in a conventional buried heterostructure InP-based laser. This technique reduces the number of regrowth steps and eliminates leakage current under high-temperature operation. The InAlAs native oxide buried heterostructure (NOBH) laser with strain-compensated InGaAsP/InP multiple quantum well active layers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 μm. A characteristic temperature (T0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. © 1998 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.122899
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1063/1.122899
dc.description.sourcetitleApplied Physics Letters
dc.description.volume73
dc.description.issue26
dc.description.page3803-3805
dc.description.codenAPPLA
dc.identifier.isiut000077791500001
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