Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.122899
DC Field | Value | |
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dc.title | Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer | |
dc.contributor.author | Wang, Z.J. | |
dc.contributor.author | Chua, S.-J. | |
dc.contributor.author | Zhou, F. | |
dc.contributor.author | Wang, W. | |
dc.contributor.author | Wu, R.H. | |
dc.date.accessioned | 2014-10-07T02:56:08Z | |
dc.date.available | 2014-10-07T02:56:08Z | |
dc.date.issued | 1998 | |
dc.identifier.citation | Wang, Z.J., Chua, S.-J., Zhou, F., Wang, W., Wu, R.H. (1998). Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer. Applied Physics Letters 73 (26) : 3803-3805. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122899 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80311 | |
dc.description.abstract | An InAlAs native oxide is used to replace the p-n reverse-biased junction in a conventional buried heterostructure InP-based laser. This technique reduces the number of regrowth steps and eliminates leakage current under high-temperature operation. The InAlAs native oxide buried heterostructure (NOBH) laser with strain-compensated InGaAsP/InP multiple quantum well active layers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 μm. A characteristic temperature (T0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. © 1998 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.122899 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.doi | 10.1063/1.122899 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 73 | |
dc.description.issue | 26 | |
dc.description.page | 3803-3805 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000077791500001 | |
Appears in Collections: | Staff Publications |
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