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|Title:||Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer||Authors:||Wang, Z.J.
|Issue Date:||1998||Citation:||Wang, Z.J., Chua, S.-J., Zhou, F., Wang, W., Wu, R.H. (1998). Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer. Applied Physics Letters 73 (26) : 3803-3805. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122899||Abstract:||An InAlAs native oxide is used to replace the p-n reverse-biased junction in a conventional buried heterostructure InP-based laser. This technique reduces the number of regrowth steps and eliminates leakage current under high-temperature operation. The InAlAs native oxide buried heterostructure (NOBH) laser with strain-compensated InGaAsP/InP multiple quantum well active layers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 μm. A characteristic temperature (T0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. © 1998 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80311||ISSN:||00036951||DOI:||10.1063/1.122899|
|Appears in Collections:||Staff Publications|
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