Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.356020
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dc.titleAnalysis of the variation in the field-dependent behavior of thermally oxidized tantalum oxide films
dc.contributor.authorChoi, W.K.
dc.contributor.authorLing, C.H.
dc.date.accessioned2014-10-07T02:55:57Z
dc.date.available2014-10-07T02:55:57Z
dc.date.issued1994
dc.identifier.citationChoi, W.K., Ling, C.H. (1994). Analysis of the variation in the field-dependent behavior of thermally oxidized tantalum oxide films. Journal of Applied Physics 75 (8) : 3987-3990. ScholarBank@NUS Repository. https://doi.org/10.1063/1.356020
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80294
dc.description.abstractThe field-dependent behavior of the conductivity (σ) of thermally oxidized tantalum oxide films has been analyzed based on a model we developed previously [W. K. Choi, J. J. Delima, and A. E. Owen, Phys. Status Solidi B 137, 345 (1986)]. Comparison with published data shows that the agreement in the log(σ) versus the square root of the applied field is very good. The relative dielectric constants obtained from the simulations compared very favorably with the published results. The donor density for the tantalum oxide films were estimated to be between 1.7×1014 and 2×10 17 cm-3 depending on the films preparation conditions.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.356020
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1063/1.356020
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume75
dc.description.issue8
dc.description.page3987-3990
dc.identifier.isiutA1994NG57700040
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