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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80285
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dc.titleAcceptor-related radiative recombination of quasi-two-dimensional electrons in modulation-doped GaAs/AlxGa1-xAs heterojunctions
dc.contributor.authorChua, S.J.
dc.contributor.authorXu, S.J.
dc.contributor.authorTang, X.H.
dc.date.accessioned2014-10-07T02:55:50Z
dc.date.available2014-10-07T02:55:50Z
dc.date.issued1996-04-10
dc.identifier.citationChua, S.J.,Xu, S.J.,Tang, X.H. (1996-04-10). Acceptor-related radiative recombination of quasi-two-dimensional electrons in modulation-doped GaAs/AlxGa1-xAs heterojunctions. Modern Physics Letters B 10 (8) : 323-328. ScholarBank@NUS Repository.
dc.identifier.issn02179849
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80285
dc.description.abstractThe radiative recombination of quasi-two-dimensional electrons with photoexcited holes bound to acceptors is investigated in modulation-doped GaAs/AlxGa1-xAs heterojunctions. With increase in temperature, a blue shift of about 2.5 meV is observed for a temperature change from 4 K to 40 K. Also, observed is a rapid decrease in intensity of its low energy peaks. This change in line shape of the acceptor-related emission in the GaAs/AlxGa1-xAs heterojunctions is accounted for by the effect of band bending and the spatial distribution of acceptors. © World Scientific Publishing Company.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleModern Physics Letters B
dc.description.volume10
dc.description.issue8
dc.description.page323-328
dc.description.codenMPLBE
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

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