Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/80285
Title: | Acceptor-related radiative recombination of quasi-two-dimensional electrons in modulation-doped GaAs/AlxGa1-xAs heterojunctions | Authors: | Chua, S.J. Xu, S.J. Tang, X.H. |
Issue Date: | 10-Apr-1996 | Citation: | Chua, S.J.,Xu, S.J.,Tang, X.H. (1996-04-10). Acceptor-related radiative recombination of quasi-two-dimensional electrons in modulation-doped GaAs/AlxGa1-xAs heterojunctions. Modern Physics Letters B 10 (8) : 323-328. ScholarBank@NUS Repository. | Abstract: | The radiative recombination of quasi-two-dimensional electrons with photoexcited holes bound to acceptors is investigated in modulation-doped GaAs/AlxGa1-xAs heterojunctions. With increase in temperature, a blue shift of about 2.5 meV is observed for a temperature change from 4 K to 40 K. Also, observed is a rapid decrease in intensity of its low energy peaks. This change in line shape of the acceptor-related emission in the GaAs/AlxGa1-xAs heterojunctions is accounted for by the effect of band bending and the spatial distribution of acceptors. © World Scientific Publishing Company. | Source Title: | Modern Physics Letters B | URI: | http://scholarbank.nus.edu.sg/handle/10635/80285 | ISSN: | 02179849 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.