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|Title:||High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED||Authors:||Toh, S.L.
|Issue Date:||2004||Citation:||Toh, S.L.,Li, K.,Ang, C.H.,Er, E.,Redkar, S.,Loh, K.P.,Boothroyd, C.B.,Chan, L. (2004). High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 143-146. ScholarBank@NUS Repository.||Abstract:||Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with nanometer spatial resolution, we have evaluated the mechanical stress induced in deep sub-micron devices by different etch-stop-layers (ESLs) and have demonstrated that the stress along the channel region can be engineered through the implementation of different ESLs. © 2004 IEEE.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/77450|
|Appears in Collections:||Staff Publications|
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