Please use this identifier to cite or link to this item:
Title: Structure of Co deposited 6H-SiC(0 0 0 1)
Authors: Chen, W. 
Xu, H. 
Loh, K.P. 
Wee, A.T.S. 
Keywords: Cobalt silicides
Issue Date: 5-Dec-2005
Citation: Chen, W., Xu, H., Loh, K.P., Wee, A.T.S. (2005-12-05). Structure of Co deposited 6H-SiC(0 0 0 1). Surface Science 595 (1-3) : 107-114. ScholarBank@NUS Repository.
Abstract: Clean 6H-SiC(0 0 0 1)-(3 × 3) surfaces were deposited with 0.25-3.5 Å Co at room temperature and subsequently annealed to 950 °C. The structure, chemistry and morphology of Co deposited SiC surfaces were investigated using low energy electron diffraction, X-ray photoelectron spectroscopy, scanning tunneling microscopy, and atomic force microscopy. A Co-induced (6 × 6) superstructure is observed by LEED after annealing 0.25 Å Co deposited SiC surface at 700 °C for 5 min. At higher coverage, CoSi(1 × 1) domains rotated 30° with respect to the underlying SiC substrate are formed after annealing 3.5 Å Co deposited SiC surface at 300 °C for 5 min. The LEED patterns as a function of Co coverage and annealing temperature are also reported. © 2005 Elsevier B.V. All rights reserved.
Source Title: Surface Science
ISSN: 00396028
DOI: 10.1016/j.susc.2005.08.005
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.