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Title: Reconstructions 3 × 3 and √3 × √3 on SiC(0 0 0 1) studied using RHEED
Authors: Yakovlev, N.
Xianning, X. 
Ping, L.K. 
Hai, X. 
Keywords: Electron diffraction
Surface reconstruction
Issue Date: 1-Aug-2009
Citation: Yakovlev, N., Xianning, X., Ping, L.K., Hai, X. (2009-08-01). Reconstructions 3 × 3 and √3 × √3 on SiC(0 0 0 1) studied using RHEED. Surface Science 603 (15) : 2263-2270. ScholarBank@NUS Repository.
Abstract: The 3 × 3 and √3 × √3 reconstructions on 6H-SiC(0 0 0 1) surface were obtained via depositing thin silicon layer and annealing it in ultrahigh vacuum (without Si flux). Rocking curves of reflection high energy electron diffraction (RHEED) were measured for integer and fractional order beams. They were fitted with results of many-beam calculation on the basis of dynamical theory of RHEED to determine structural parameters. For √3 × √3 superstructure, it was found that the occupancy of adatom states is 0.45 (incomplete coverage). In the sequence of Si-C double layers ABCACB, the lattice is terminated with the layer A. For 3 × 3 superstructure, the rocking curves support the model with twisted tetra-cluster. The best-fit twist is as half of that predicted in ab initio calculations; it is due to limited source of Si atoms to build up the superstructure. Larger twist correlates with higher occupancy of corner sites and with slower cooling rate of the sample after annealing. © 2009.
Source Title: Surface Science
ISSN: 00396028
DOI: 10.1016/j.susc.2009.04.033
Appears in Collections:Staff Publications

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