Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1536959
DC Field | Value | |
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dc.title | Precursor states of atomic hydrogen on the Si(100)-(2×1) surface | |
dc.contributor.author | Tok, E.S. | |
dc.contributor.author | Engstrom, J.R. | |
dc.contributor.author | Kang, H.C. | |
dc.date.accessioned | 2014-06-23T05:47:10Z | |
dc.date.available | 2014-06-23T05:47:10Z | |
dc.date.issued | 2003-02-15 | |
dc.identifier.citation | Tok, E.S., Engstrom, J.R., Kang, H.C. (2003-02-15). Precursor states of atomic hydrogen on the Si(100)-(2×1) surface. Journal of Chemical Physics 118 (7) : 3294-3299. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1536959 | |
dc.identifier.issn | 00219606 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/76795 | |
dc.description.abstract | The precursor states of atomic hydrogen on the Si(100)-(2×1) surface were discussed. It was found that 'hot' hydrogen atoms of energies up to approximately 1.3-1.9 eV was trapped on the surface. The analysis suggested that the existence of precursor states provides an understanding of the non-Langmuirian atomic hydrogen adsorption probability. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1536959 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | CHEMISTRY | |
dc.contributor.department | MATERIALS SCIENCE | |
dc.description.doi | 10.1063/1.1536959 | |
dc.description.sourcetitle | Journal of Chemical Physics | |
dc.description.volume | 118 | |
dc.description.issue | 7 | |
dc.description.page | 3294-3299 | |
dc.description.coden | JCPSA | |
dc.identifier.isiut | 000180702500037 | |
Appears in Collections: | Staff Publications |
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