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|Title:||Precursor states of atomic hydrogen on the Si(100)-(2×1) surface||Authors:||Tok, E.S.
|Issue Date:||15-Feb-2003||Citation:||Tok, E.S., Engstrom, J.R., Kang, H.C. (2003-02-15). Precursor states of atomic hydrogen on the Si(100)-(2×1) surface. Journal of Chemical Physics 118 (7) : 3294-3299. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1536959||Abstract:||The precursor states of atomic hydrogen on the Si(100)-(2×1) surface were discussed. It was found that 'hot' hydrogen atoms of energies up to approximately 1.3-1.9 eV was trapped on the surface. The analysis suggested that the existence of precursor states provides an understanding of the non-Langmuirian atomic hydrogen adsorption probability.||Source Title:||Journal of Chemical Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/76795||ISSN:||00219606||DOI:||10.1063/1.1536959|
|Appears in Collections:||Staff Publications|
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