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Title: Growth of single crystal ZnO nanorods on GaN using an aqueous solution method
Authors: Le, H.Q.
Chua, S.J.
Koh, Y.W.
Loh, K.P. 
Chen, Z.
Thompson, C.V.
Fitzgerald, E.A.
Issue Date: 5-Sep-2005
Citation: Le, H.Q., Chua, S.J., Koh, Y.W., Loh, K.P., Chen, Z., Thompson, C.V., Fitzgerald, E.A. (2005-09-05). Growth of single crystal ZnO nanorods on GaN using an aqueous solution method. Applied Physics Letters 87 (10) : -. ScholarBank@NUS Repository.
Abstract: Uniformly distributed ZnO nanorods with diameter 80-120 nm and 2 μm long have been grown at low temperatures on gallium nitride (GaN) by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and pH. No catalyst is required. The x-ray diffraction (XRD) and transmission electron microscopy (TEM) studies show that the ZnO nanorods are single crystals and they grow along the c axis of the crystal plane. The room temperature photoluminescence (PL) measurements have shown ultraviolet peaks at 388 nm with high intensity, which are comparable to those found in high quality ZnO films. The mechanism of the nanorod growth in the aqueous solution is also proposed. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.2041833
Appears in Collections:Staff Publications

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