Please use this identifier to cite or link to this item:
Title: Epitaxial growth of diindenoperylene ultrathin films on Ag(111) investigated by LT-STM and LEED
Authors: Huang, H. 
Sun, J.-T. 
Feng, Y.P. 
Chen, W. 
Wee, A.T.S. 
Issue Date: 21-Dec-2011
Citation: Huang, H., Sun, J.-T., Feng, Y.P., Chen, W., Wee, A.T.S. (2011-12-21). Epitaxial growth of diindenoperylene ultrathin films on Ag(111) investigated by LT-STM and LEED. Physical Chemistry Chemical Physics 13 (47) : 20933-20938. ScholarBank@NUS Repository.
Abstract: The epitaxial growth of the 1st and 2nd monolayer (ML) diindenoperylene (DIP) on Ag(111) has been systematically investigated using low temperature scanning tunneling microscopy, low energy electron diffraction and first-principles calculations. At one ML regime, DIP molecules commensurately arrange in either herringbone or brick-wall superstructures, depending on the deposition rate. Tip-induced structural transformation from herringbone to brick-wall is observed. Calculations based on density functional theory reveal that the top site of Ag(111) is energetically favorable for both superstructures. The 2nd ML DIP aggregate in either herringbone or brick-wall superstructures depending on the arrangements of the 1st ML DIP, indicating that the structural properties of DIP thin films on Ag(111) are sensitive to growth conditions. The observed variation in DIP ultrathin film structure may result in different electronic properties and have implications for DIP-based organic electronic devices, such as organic field-effect transistors or organic photovoltaic cells. © 2011 the Owner Societies.
Source Title: Physical Chemistry Chemical Physics
ISSN: 14639076
DOI: 10.1039/c1cp22769f
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Apr 21, 2021


checked on Apr 21, 2021

Page view(s)

checked on Apr 12, 2021

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.